US Patent Issued to NANYA TECHNOLOGY on Feb. 3 for "Dynamic random-access memory (DRAM) device" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,174, issued on Feb. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Dynamic random-access memory (DRAM) device" was invented by Chih-Jen Chen (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random-access memory (DRAM) device is provided. The DRAM device includes a plurality of slave DRAM chips and a master DRAM chip. Each of the plurality of slave DRAM chips includes a slave fuse circuit and a slave reference voltage generator. The slave fuse circuit provides a slave set signal according to a slave fuse setting operation of the slave fuse circuit. The slave reference voltage generator provides a slave refe...