US Patent Issued to NANYA TECHNOLOGY on Feb. 25 for "Method of manufacturing memory device having active area in elongated block" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,209, issued on Feb. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing memory device having active area in elongated block" was invented by Cheng-Ling Yang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate having an active area disposed over or in the semiconductor substrate, and a first isolation member extending into the semiconductor substrate and disposed adjacent to the active area; disposing an energy-decomposable mask over the semiconductor substrate a...