US Patent Issued to NANYA TECHNOLOGY on Feb. 25 for "Memory device having laterally extending capacitors of different lengths and levels" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,238,917, issued on Feb. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device having laterally extending capacitors of different lengths and levels" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a memory device having laterally extending capacitors of different lengths and levels. The memory device includes a semiconductor substrate; a first insulating layer disposed over the semiconductor substrate; a first bottom electrode disposed over the first insulating layer; a first dielectric layer disposed over the first bottom electrode; a first recess ...