US Patent Issued to NANYA TECHNOLOGY on Feb. 18 for "Method for fabricating semiconductor device with damascene structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,535, issued on Feb. 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for fabricating semiconductor device with damascene structure" was invented by Wei-Chen Pan (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a method for fabricating a semiconductor device including: providing a photomask including an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate; forming a pre-process mask layer on a device stack; patterning the pre-process mask layer using the photomask to form a patterned mask layer including a mask region corresponding to the...