US Patent Issued to NANYA TECHNOLOGY on Feb. 11 for "Method of manufacturing vias with pulsing plasma" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,178, issued on Feb. 11, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing vias with pulsing plasma" was invented by Zhi-Xuan Shen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor includes: providing a stacked structure comprising a first oxide layer, a second oxide layer, and a metal layer stacked between the first oxide layer and the second oxide layer; patterning the second oxide layer; forming a mask layer on the patterned second oxide layer; introducing a gas mixture to the stacked structure; and performing a pulsing plasma process to the stacked structur...