US Patent Issued to NANYA TECHNOLOGY on Feb. 10 for "Semiconductor device with electrode having step-shaped sidewall and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,343, issued on Feb. 10, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with electrode having step-shaped sidewall and method for preparing the same" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a bottom electrode structure disposed over a semiconductor substrate. The bottom electrode structure includes a first metal layer, a second metal layer, a third metal layer, a fourth metal layer, and a fifth metal layer from bottom to top. The first metal layer, the third metal layer and the fifth metal layer include a first metal material, an...