US Patent Issued to NANYA TECHNOLOGY on Dec. 9 for "Memory structure and method of forming thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,541, issued on Dec. 9, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory structure and method of forming thereof" was invented by Tseng-Fu Lu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a substrate, an isolation area, a plurality of active areas and a first word line. The isolation area and the active areas are formed on the substrate. The isolation area surrounds the active areas, and the isolation area comprises an isolation structure formed in an isolation trench recessed in the isolation area. The first word line is formed across a first active area of the active areas and the ...