US Patent Issued to NANYA TECHNOLOGY on Dec. 30 for "Semiconductor device structure with fuse and resistor and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,000, issued on Dec. 30, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure with fuse and resistor and method for preparing the same" was invented by Chin-Ling Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes an isolation structure disposed in a semiconductor substrate. The semiconductor device structure also includes a fuse and a resistor electrode disposed in the semiconductor substrate. The isolation structure is disposed between the fuse and the resistor electrode, and the isolation structure is closer to the resistor electrode than the fuse. ...