US Patent Issued to NANYA TECHNOLOGY on Dec. 2 for "Semiconductor device with air gap and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,072, issued on Dec. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with air gap and method for preparing the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an interconnect structure disposed over a semiconductor substrate. The interconnect structure includes a first interconnect portion and a second interconnect portion. The semiconductor device also includes a first porous dielectric portion disposed between the first interconnect portion and the second interconnect portion, and a dielectric layer surrounding the first porous di...