US Patent Issued to NANYA TECHNOLOGY on Dec. 2 for "Semiconductor device and method for making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,055, issued on Dec. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device and method for making the same" was invented by Yu-Hsin Wu (Taipei, Taiwan) and Hui Tzu Chan (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a word line, a word line dielectric layer, and first and second source/drain regions. The word line is buried in the substrate. The word line dielectric layer is disposed between the substrate and the word line, and the word line dielectric layer include...