US Patent Issued to NANYA TECHNOLOGY on Dec. 16 for "Semiconductor structure and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,165, issued on Dec. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure and method of forming the same" was invented by Li Han Lin (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes forming a conductive structure in a first dielectric layer. A second dielectric layer is formed over the first dielectric layer. A conductive contact is formed in the second dielectric layer. The second dielectric layer is etched to form a recess on a top surface of the conductive structure. A native oxide layer is formed on a top surface and a sidewall of the second...