US Patent Issued to NANYA TECHNOLOGY on Dec. 16 for "Semiconductor device with air gap and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,120, issued on Dec. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with air gap and method for fabricating the same" was invented by Chih-Wei Huang (Taoyuan, Taiwan), Hsu-Cheng Fan (Taoyuan, Taiwan) and Chih-Yu Yen (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a drain positioned in the substrate; a top dielectric layer positioned on the substrate; a cell contact structure including a cell contact bottom conductive layer positioned in...