US Patent Issued to NANYA TECHNOLOGY on Dec. 16 for "Memory device with vertical field effect transistor" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,606, issued on Dec. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device with vertical field effect transistor" was invented by Ming-Hung Hsieh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory device with a vertical field effect transistor (VFET) and a method for preparing the memory device. The memory device includes a capacitor contact disposed in a first semiconductor substrate, and a channel structure disposed over a top surface of the first semiconductor substrate. The memory device also includes a first gate structure disposed on a first sidewall of the channe...