ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,941, issued on Dec. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device and method for operating the same" was invented by Kuo-Chiang Hung (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first chip, a second chip and a processor. The second chip is coupled to the first chip at a first node. The second chip includes a first capacitor and a first variable resistor. The first capacitor is coupled to the first node. The first variable resistor is coupled in series with the first capacitor. The processor is coupled to the first node, and is configured to perform a first read operat...