ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,611, issued on Dec. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Integrated circuit device" was invented by Chiang-Lin Shih (New Taipei, Taiwan) and Yu-Ting Lin (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A DRAM including a silicon substrate, buried word lines, and active areas is provided. The silicon substrate has a carrier surface. The buried word lines are buried in the silicon substrate. The active areas are located on the carrier surface. The buried word lines intersect the active area. Each of the buried word lines has a first width in one of the active area, and has a second width outside the activ...