US Patent Issued to NANYA TECHNOLOGY on Aug. 5 for "Semiconductor structure having vias with different dimensions" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,167, issued on Aug. 5, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure having vias with different dimensions" was invented by Shing-Yih Shih (New Taipei, Taiwan) and Chih-Ching Lin (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure having vias with different dimensions and a manufacturing method of the semiconductor structure. The semiconductor structure includes a first wafer including a first substrate, a first dielectric layer over the first substrate, and a first conductive pad surrounded by the first dielectric layer; a second wafer incl...