US Patent Issued to NANYA TECHNOLOGY on Aug. 26 for "Semiconductor structure including bit line structure covered by oxide barrier layer and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,298, issued on Aug. 26, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure including bit line structure covered by oxide barrier layer and manufacturing method thereof" was invented by Jen-I Lai (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a bit line structure, an oxide barrier layer, and a bit line capping layer. The bit line structure is disposed on the substrate, in which the bit line structure includes a conductive silicon layer, a conductive layer, and a hard mask layer. The conductive layer is disposed on the conductive silicon layer, in which...