ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,709, issued on Aug. 19, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Method for fabricating semiconductor device with fuse structure" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device is provided. The method includes providing a substrate; forming a fuse element within the substrate and extending from an upper surface of the substrate; and forming a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate."
The patent was filed on June 14, 2022, under Application No. 17/84...