ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,472, issued on Aug. 19, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Memory device and method for operating the same" was invented by Chien Yu Chen (New Taipei, Taiwan) and Po-Jen Yang (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory circuit, a redistribution layer and a resistor circuit. The redistribution layer is coupled to the memory circuit. The resistor circuit is coupled to the memory circuit. The resistor circuit includes a first resistor set and a second resistor set. The first resistor set includes a first resistor and a second resistor. The second resistor set includes a...