US Patent Issued to NANYA TECHNOLOGY on Aug. 12 for "Memory device and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,592, issued on Aug. 12, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device and method of forming the same" was invented by Chin-Piao Chang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a semiconductor substrate, an isolation structure, and an anti-fuse structure. The isolation structure is disposed in the semiconductor substrate. The anti-fuse structure is disposed in the isolation structure and includes a first electrode and a second electrode. The second electrode is disposed adjacent to the first electrode. Both of a top surface of the first electrode and a top surface of the ...