ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,050, issued on April 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Semiconductor device with passing gate" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a passing gate is provided. The semiconductor device includes a substrate having a first trench and a first gate structure in the first trench. The first gate structure includes a first gate electrode having a first doped region."
The patent was filed on July 11, 2022, under Application No. 17/861,281.
*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/ne...