US Patent Issued to NANYA TECHNOLOGY on April 8 for "Method for preparing semiconductor device structure with features at different levels" (Taiwanese Inventor)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,552, issued on April 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing semiconductor device structure with features at different levels" was invented by Chih-Tsung Wu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor device structure with features at different levels. The method includes forming a target layer over a semiconductor substrate; forming a plurality of first energy-sensitive patterns over the target layer; performing an energy treating process to transform at least a portion of each of the first energy-sensitive patterns into a first treated portion;...