US Patent Issued to NANYA TECHNOLOGY on April 29 for "Semiconductor device structure with silicide portion between conductive plugs" (Taiwanese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,748, issued on April 29, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure with silicide portion between conductive plugs" was invented by Chun-Cheng Liao (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first conductive plug disposed in the first dielectric layer, and a second conductive plug disposed in the second dielectric layer and directly over the first con...