US Patent Issued to NANYA TECHNOLOGY on April 22 for "Method of manufacturing semiconductor device having air cavity" (Taiwanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,567, issued on April 22, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor device having air cavity" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing an interconnection structure. The method also includes forming a first dielectric layer on the interconnection structure. The method further includes forming a sacrificial pattern on the first dielectric layer. The method also includes forming an RDL on the first dielectric layer and the sacrificial...