US Patent Issued to NANYA TECHNOLOGY on April 22 for "Method for manufacturing a semiconductor structure for detecting vertical electrical leakage" (Taiwanese Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,530, issued on April 22, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing a semiconductor structure for detecting vertical electrical leakage" was invented by Chun-Shun Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing semiconductor testing structure includes providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer comprises a plurality of fingers extending along a first direction; forming a dielectric structure on the first metal layer; and forming a plurality of second metal layers on the dielectric structure."

The patent w...