ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,179, issued on April 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Semiconductor structure having fuse below gate structure and method of manufacturing thereof" was invented by Wei-Zhong Li (Taoyuan, Taiwan) and Hsih-Yang Chiu (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate; a transistor disposed over the substrate; and a trench fuse disposed in the substrate and penetrating a source/drain (S/D) region of the transistor. A method for manufacturing the semiconductor structure is also provided."
The patent was...