US Patent Issued to NANYA TECHNOLOGY on April 15 for "Semiconductor device with multi-carbon-concentration dielectrics" (Taiwanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,183, issued on April 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with multi-carbon-concentration dielectrics" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device. The semiconductor device includes a first insulating layer positioned on a substrate; a bottom contact positioned in the first insulating layer; a bottom dielectric layer, a lower middle dielectric layer, a higher middle dielectric layer, and a top dielectric layer sequentially stacked on the first insulating layer; and a conductive structure including...