US Patent Issued to NANYA TECHNOLOGY on April 15 for "Semiconductor device with composite conductive features and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,140, issued on April 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with composite conductive features and method for preparing the same" was invented by Tzu-Ching Tsai (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device with a composite conductive feature and an air gap and a method for preparing the semiconductor device. The semiconductor device includes a first composite conductive feature and a second composite conductive feature disposed over a pattern-dense region of a semiconductor substrate. The semiconductor device also includes a third ...