US Patent Issued to NANYA TECHNOLOGY on April 15 for "Semiconductor device with buried gate structures" (Taiwanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,456, issued on April 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with buried gate structures" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provide a semiconductor device and a method for preparing the semiconductor device. The semiconductor device includes a first buried gate structure and a second buried gate structure disposed in a semiconductor substrate. The first buried gate structure includes a first gate dielectric layer, and a first lower semiconductor layer disposed over the first gate dielectric layer. The first lower semiconduc...