US Patent Issued to NANYA TECHNOLOGY on April 15 for "Semiconductor device structure having fuse elements" (Taiwanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,418, issued on April 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure having fuse elements" was invented by Wu-Der Yang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure, a second gate structure, and a first active region. The first gate structure extends along a first direction and is electrically connected to a first transistor. The second gate structure extends along the first direction and is electrically connected to a second transistor. The first active region extends alon...