US Patent Issued to NANYA TECHNOLOGY on April 15 for "Method of manufacturing memory device with first and second isolation members using patterned photoresist layer and energy-decomposable mask" (Taiwanese Inventor)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,138, issued on April 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing memory device with first and second isolation members using patterned photoresist layer and energy-decomposable mask" was invented by Cheng-Ling Yang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate including an active area disposed over or in the semiconductor substrate; disposing a patterned photoresist layer over the semiconductor substrate; removing a first portion of the semiconducto...