ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,597, issued on May 13, was assigned to Nantong Sanrise Integrated Circuit Co. LTD (Jiangsu, China).
"Planar high-electron-mobility transistor" was invented by Xiang Zhou (Jiangsu, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a planar High-Electron-Mobility Transistor (HEMT), which includes a hetero-junction consisting of a first semiconductor epitaxial layer and a second semiconductor epitaxial layer, and two-dimensional electron gas located at an interface of the hetero-junction; a bottom surface of a gate trench of a trench gate is located at a bottom of the two-dimensional electron gas to cut off the two-...