US Patent Issued to NANKAI UNIVERSITY on July 1 for "Lithium niobate semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,595, issued on July 1, was assigned to NANKAI UNIVERSITY (Tianjin, China).

"Lithium niobate semiconductor structure and manufacturing method thereof" was invented by Guoquan Zhang (Tianjin, China), Yuezhao Qian (Tianjin, China), Yuchen Zhang (Tianjin, China) and Jingjun Xu (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lithium niobate semiconductor structure includes: a first lithium niobate material layer, a second lithium niobate material layer and a third lithium niobate material layer. A polarization direction of a ferroelectric domain of the first lithium niobate material layer is a first direction. The second lithium niobate m...