US Patent Issued to NANJING UNIVERSITY on May 6 for "Wide bandgap semiconductor structure for irradiation characteristic test and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,154, issued on May 6, was assigned to NANJING UNIVERSITY (Nanjing, China).

"Wide bandgap semiconductor structure for irradiation characteristic test and preparation method thereof" was invented by Feng Zhou (Jiangsu, China), Yu Rong (Jiangsu, China), Hai Lu (Jiangsu, China), Weizong Xu (Jiangsu, China), Dong Zhou (Jiangsu, China) and Fangfang Ren (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wide bandgap semiconductor structure for an irradiation characteristic test includes a substrate with metal plates and a wide bandgap semiconductor part. The wide bandgap semiconductor part includes a gallium nitride layer, a barrier layer, P-...