US Patent Issued to NANJING UNIVERSITY on May 13 for "GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,746, issued on May 13, was assigned to NANJING UNIVERSITY (Nanjing, China).

"GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof" was invented by Feng Zhou (Nanjing, China), Yu Rong (Nanjing, China), Hai Lu (Nanjing, China), Weizong Xu (Nanjing, China), Dong Zhou (Nanjing, China) and Fangfang Ren (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses a GaN HEMT transistor with impact energy release capability for use in aerospace irradiation environment and preparation method thereof. The transistor includes a substrate layer, a ...