US Patent Issued to Nanjing University on June 3 for "Voltage-controlled three-terminal magnon transistor, and control and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,357, issued on June 3, was assigned to Nanjing University (Nanjing, China).

"Voltage-controlled three-terminal magnon transistor, and control and preparation method thereof" was invented by Haifeng Ding (Nanjing, China), Bingfeng Miao (Nanjing, China), Jun Cheng (Nanjing, China), Rui Yu (Nanjing, China) and Liang Sun (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A voltage-controlled three-terminal magnon transistor is provided, including a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. After a current is inputted into the generation terminal, a magnon is...