US Patent Issued to NANJING UNIVERSITY on Aug. 12 for "Method for uniform growth of bi-layer transition metal dichalcogenide continuous films" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,385,140, issued on Aug. 12, was assigned to NANJING UNIVERSITY (Nanjing, China).

"Method for uniform growth of bi-layer transition metal dichalcogenide continuous films" was invented by Xinran Wang (Nanjing, China), Lei Liu (Nanjing, China), Taotao Li (Nanjing, China) and Yi Shi (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchrono...