US Patent Issued to NANJING UNIVERSITY on April 29 for "GaN HEMT device for irradiation damage detection and detection and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,287,360, issued on April 29, was assigned to NANJING UNIVERSITY (Nanjing, China).

"GaN HEMT device for irradiation damage detection and detection and manufacturing method therefor" was invented by Feng Zhou (Jiangsu, China), Can Zou (Jiangsu, China), Hai Lu (Jiangsu, China), Weizong Xu (Jiangsu, China), Dong Zhou (Jiangsu, China) and Fangfang Ren (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses a GaN HEMT device for irradiation damage detection which comprises a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer. A p-type gallium nitride layer is provided on the barrier layer. A ...