US Patent Issued to NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS on April 8 for "Monolithic optoelectronic integrated circuit and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,271,028, issued on April 8, was assigned to NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (Nanjing, China).

"Monolithic optoelectronic integrated circuit and method for forming same" was invented by Yongjin Wang (Nanjing, China), Jiabin Yan (Nanjing, China) and Jinlong Piao (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A monolithic optoelectronic integrated circuit is provided, including: a substrate including photonic integrated device region and a peripheral circuit region; a first GaN-based multi-quantum well optoelectronic PN-junction device including a first P-type ohmic contact electrode and a first N-type ohmic contact elect...