ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,446,504, issued on Oct. 21, was assigned to Nanjing Suman Plasma ERI. Co. Ltd. (Jiangsu, China), NJ Tianliang Bioengineering Technology Co. Ltd. (Jiangsu, China) and NANJING AGRICULTURAL UNIVERSITY (Jiangsu, China).
"Method for activating crop seed by high-voltage electric field cold plasma (HVCP), and use thereof" was invented by Xilin Hou (Nanjing, China), Dong Xiao (Nanjing, China), Ying He (Nanjing, China), Ying Li (Nanjing, China), Jianhao Zhang (Nanjing, China) and Jinglin Wan (Nanjing, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for activating a crop seed by high-voltage electric field cold plas...