US Patent Issued to Nanjing Greenchip Semiconductor on July 15 for "Stacked multilayer 3D GaN high electron mobility transistor structure and process method" (Chinese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,005, issued on July 15, was assigned to Nanjing Greenchip Semiconductor Co. Ltd. (Nanjing, China).

"Stacked multilayer 3D GaN high electron mobility transistor structure and process method" was invented by Kuang-Po Hsueh (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A GaN HEMT with a stacked multilayer 3D structure is proposed, which is formed by re-growing a GaN layer, fabricated a second HEMT on a dielectric protective layer and connected the source, gate or drain electrodes of the respective GaN HEMT. Process is repeated to form at least three layers GaN HEMT structure, one stacked on top of the other, with each electrode of indi...