US Patent Issued to NAMI MOS on Sept. 30 for "Shielded gate trench MOSFETs with improved termination structures" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,966, issued on Sept. 30, was assigned to NAMI MOS Co. LTD. (New Taipei, Taiwan).

"Shielded gate trench MOSFETs with improved termination structures" was invented by Fu-Yuan Hsieh (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Shielded gate trench MOSFETs with gate trenches separated from termination trenches are disclosed, wherein a first type body regions are formed in an active area and an first type electric field reducing regions formed adjacent to an intersection regions between a first termination trench and trench ends of gate trenches; The first type electric field reducing regions formed between the first type body regi...