ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,915, issued on June 10, was assigned to NAMI MOS Co. LTD. (New Taipei, Taiwan).
"Superfunction MOSFETs having shielded gate trench structures" was invented by Fu-Yuan Hsieh (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention introduces new shielded gate trench (SGT) superjunction (SJ) MOSFETs having a first type multiple stepped epitaxial (MSE) structure in oxide charge balance (OCB) region and a second type MSE structure in SJ region for improved specific on-resistance Rsp and gate-to-drain charge Qgd. The two-type MSE structures can increase the average doping concentration in drift regions of the SGT SJ MOSFET...