US Patent Issued to MURATA MANUFACTURING on Sept. 30 for "Method of fabricating a semiconductor structure with improved dicing properties" (French Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,391, issued on Sept. 30, was assigned to MURATA MANUFACTURING Co. LTD..

"Method of fabricating a semiconductor structure with improved dicing properties" was invented by Frederic Voiron (Barraux, France), Brigitte Soulier (Grenoble, France) and Hiroshi Nakagawa (Caen, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor structure that includes: forming a first metal layer over a wafer; forming a second metal layer over the first metal layer; forming a first porous structure in a first region of the second metal layer located above a circuit area of the wafer and a second porous structure in a second region o...