US Patent Issued to MURATA MANUFACTURING on Sept. 30 for "Capacitor structure with via embedded in porous medium" (French Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,291, issued on Sept. 30, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).

"Capacitor structure with via embedded in porous medium" was invented by Frederic Voiron (Barraux, France), Brigitte Soulier (Grenoble, France) and Julien El Sabahy (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure that includes a substrate; a conductive layer above the substrate; and a porous layer, above the conductive layer, having pores that extend perpendicularly from a top surface of the porous layer toward the conductive layer. The porous layer comprises a first region in which pores conductive wires are disposed, ...