ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,991, issued on Sept. 30, was assigned to Murata Manufacturing Co. Ltd. (Nagaokakyo, Japan).
"Back-gate effect control via doping" was invented by Kouassi Sebastien Kouassi (San Diego), Sinan Goktepeli (San Diego) and Simon Edward Willard (San Diego).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and structures for mitigating back-gate effects in a radio frequency (RF) silicon-on-insulator (SOI) substrate, RF-SOI, are presented. According to one aspect, a first implant or junction is formed in a region of a trap-rich layer (TRL) of the RF-SOI that is located below a first circuit/device to protect. The first implant or junction is fully conta...