ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,389, issued on Sept. 23, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).
"Semiconductor device and capacitance device" was invented by Takeshi Kagawa (Nagaokakyo, Japan), Masatomi Harada (Nagaokakyo, Japan) and Hiroshi Matsubara (Nagaokakyo, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first el...