ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,383, issued on Sept. 23, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).
"Semiconductor device" was invented by Masatomi Harada (Nagaokakyo, Japan), Korekiyo Ito (Nagaokakyo, Japan), Takeshi Kagawa (Nagaokakyo, Japan) and Yuta Imamura (Nagaokakyo, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor that includes: a substrate; a first electrode layer on the substrate, the first electrode layer including a first principal surface facing the substrate, and a second principal surface opposite the first principal surface; a dielectric film on the first electrode layer and covering an end portion of the first electrode lay...