ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,445,108, issued on Oct. 14, was assigned to MURATA MANUFACTURING Co. LTD. (Kyoto, Japan).

"Acoustic wave device" was invented by Katsuya Daimon (Nagaokakyo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An acoustic wave device includes a support substrate, a piezoelectric film, and an IDT electrode. When a wavelength defined by an electrode finger pitch of the IDT electrode is Lambda, a thickness of the piezoelectric film is about 1Lambda or less. The piezoelectric film has crystal axes. The support substrate includes first and second silicon layers. A plane orientation of the first and second silicon layers is (100), (110), or (111). When angles...