US Patent Issued to MURATA MANUFACTURING on Nov. 18 for "Semiconductor structure enhanced for high voltage applications" (French Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,758, issued on Nov. 18, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).

"Semiconductor structure enhanced for high voltage applications" was invented by Frederic Voiron (Barraux, France) and Larry Buffle (Caen, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure that includes a protruding wall structure that extends from a base surface of a substrate. Corners of the protruding wall structure may be smoothed or rounded to reduce electrical stress within the structure. The protruding wall structure may be partitioned into multiple wall regions disposed along different directions of the substrate to reduce...